new product ss10p3 & ss10p4 vishay general semiconductor document number: 88983 revision: 22-nov-07 www.vishay.com 1 high current density surface mount schottky barrier rectifiers features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? guardring for overvoltage protection ? low forward voltage drop, low power losses ? high efficiency ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. mechanical data case: to-277a (smpc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for commercial grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test primary characteristics i f(av) 10 a v rrm 30 v, 40 v i fsm 280 a e as 20 mj v f at i f = 10 a 0.41 v t j max. 150 c k 2 1 to-277a (smpc) anode 1 anode 2 cathode k esmp tm series maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss10p3 ss10p4 unit device marking code s103 s104 maximum repetitive peak reverse voltage v rrm 30 40 v maximum average forward rectified current (fig. 1) i f(av) 10 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 280 a non-repetitive avalanche energy at i as = 2 a, t j = 25 c e as 20 mj operating junction and storage temperature range t j, t stg - 55 to + 150 c
new product ss10p3 & ss10p4 vishay general semiconductor www.vishay.com document number: 88983 revision: 22-nov-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) units mounted on recommended p.c.b. 1 oz. pad layout note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) i f = 5 a i f = 10 a t a = 25 c v f 0.41 0.48 - 0.56 v i f = 5 a i f = 10 a t a = 125 c 0.31 0.41 - 0.49 reverse current (1) rated v r t a = 25 c t a = 125 c i r 100 50 800 100 a ma typical junction capacitance 4.0 v, 1 mhz c j 750 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss10p3 ss10p4 unit typical thermal resistance r ja (1) r jl 60 3 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss10p4-e3/86a 0.10 86a 1500 7" diameter plastic tape and reel ss10p4-e3/87a 0.10 87a 6500 13" diameter plastic tape and reel ss10p4he3/86a (1) 0.10 86a 1500 7" diameter plastic tape and reel ss10p4he3/87a (1) 0.10 87a 6500 13" diameter plastic tape and reel figure 1. maximum forward current derating curve 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 lead temperat u re (c) a v erage for w ard c u rrent (a) resisti v e or ind u cti v e load t l meas u red at the cathode band terminal figure 2. forward power loss characteristics a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) 0246 8 10 12 0 1 2 3 4 5 6 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = t p /t t p t
new product ss10p3 & ss10p4 vishay general semiconductor document number: 88983 revision: 22-nov-07 www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 100 10 1 0.1 0.01 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t a = 150 c t a = 125 c t a = 25 c 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) t a = 150 c t a = 125 c t a = 25 c figure 5. typical junction capacitance figure 6. typical transient thermal impedance t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) 10000 1000 100 0.1 1 10 100 j u nction to am b ient 0.01 0.1 1 10 100 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w )
new product ss10p3 & ss10p4 vishay general semiconductor www.vishay.com document number: 88983 revision: 22-nov-07 4 package outline dimensions in inches (millimeters) conform to jedec to-277a 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.1 8 7 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.23 8 (6.05) 0.171 (4.35) 0.167 (4.25) k 21 0.026 (0.65) n om. to-277a (smpc) 0.146 (3.70) 0.134 (3.40) 0.0 8 7 (2.20) 0.075 (1.90) 0.1 8 9 (4. 8 0) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) n om. 0.0 8 4 (2.13) n om. 0.155 (3.94) n om. mountin g pad layout 0.26 8 (6. 8 0) 0.1 8 6 (4.72) mi n . 0.050 (1.27) mi n . 0.041 (1.04) 0.055 (1.40) mi n . 0.1 8 9 (4. 8 0) mi n .
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